Discrete Semiconductor Products

IXGX60N60C2D1

Obsolete

IGBT 600V 75A 480W PLUS247

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Discrete Semiconductor Products

Obsolete

IGBT 600V 75A 480W PLUS247

Technical Specifications

Parameters and characteristics for this part

Specification	IXGX60N60C2D1

Current - Collector (Ic) (Max) [Max]	75 A
Current - Collector Pulsed (Icm)	300 A
Gate Charge	146 nC
IGBT Type	PT
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3 Variant
Power - Max [Max]	480 W
Reverse Recovery Time (trr)	35 ns
Supplier Device Package	PLUS247™-3
Switching Energy	480 µJ, 400 µJ
Td (on/off) @ 25°C	95 ns, 18 ns
Test Condition	400 V, 15 V, 50 A, 2 Ohm
Vce(on) (Max) @ Vge, Ic	2.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

Part	Current - Collector (Ic) (Max) [Max]	Gate Charge	Package / Case	Test Condition	Switching Energy	Mounting Type	Reverse Recovery Time (trr)	Operating Temperature [Min]	Operating Temperature [Max]	Td (on/off) @ 25°C	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector Pulsed (Icm)	Power - Max [Max]	IGBT Type	Vce(on) (Max) @ Vge, Ic	Td (on/off) @ 25°C
IXYS IXGX60N60C2D1	75 A	146 nC	TO-247-3 Variant	2 Ohm 15 V 50 A 400 V	400 µJ 480 µJ	Through Hole	35 ns	-55 °C	150 °C	18 ns 95 ns	PLUS247™-3	600 V	300 A	480 W	PT	2.5 V
IXYS IXGX60N60B2D1	75 A	170 nC	TO-247-3 Variant	3.3 Ohm 15 V 50 A 400 V	1 mJ	Through Hole	35 ns	-55 °C	150 °C		PLUS247™-3	600 V	300 A	500 W	PT	1.8 V	28 ns 160 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

IGBT PT 600 V 75 A 480 W Through Hole PLUS247™-3

Technical documentation and resources