Discrete Semiconductor Products

PJQ2410_R1_00001

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DFN2020B-6L, MOSFET

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Discrete Semiconductor Products

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DFN2020B-6L, MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	PJQ2410_R1_00001

Current - Continuous Drain (Id) @ 25°C	10 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	7.1 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Power Dissipation (Max)	2 W
Rds On (Max) @ Id, Vgs	12 mOhm
Supplier Device Package	DFN2020B-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	Mounting Type	Technology	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs
Panjit International Inc. PJQ2410_R1_00001	2.5 V	7.1 nC	150 °C	-55 °C	DFN2020B-6	Surface Mount	MOSFET (Metal Oxide)	N-Channel	4.5 V 10 V	2 W	30 V	20 V	10 A	12 mOhm

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General part information

N-Channel 30 V 10A (Ta) 2W (Ta) Surface Mount DFN2020B-6

Technical documentation and resources

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