Zenode.ai Logo
Beta
MAXMAXDS3141N
Integrated Circuits (ICs)

UPD48576118F1-E18-DW1-A

Obsolete
Renesas Electronics Corporation

576M-BIT LOW LATENCY DRAM SEPARATE I/O

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet
MAXMAXDS3141N
Integrated Circuits (ICs)

UPD48576118F1-E18-DW1-A

Obsolete
Renesas Electronics Corporation

576M-BIT LOW LATENCY DRAM SEPARATE I/O

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationUPD48576118F1-E18-DW1-A
Clock Frequency533 MHz
Memory FormatDRAM
Memory InterfaceHSTL
Memory Organization32 M
Memory Size576 Mbit
Memory TypeVolatile
Mounting TypeSurface Mount
Operating Temperature [Max]95 °C
Operating Temperature [Min]0 °C
Package / Case144-TBGA
Supplier Device Package144-TFBGA (11x18.5)
TechnologyLLDRAM
Voltage - Supply [Max]1.9 V
Voltage - Supply [Min]1.7 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 4$ 75.64

Description

General part information

UPD48576118F1-E18-DW1-A Series

The µPD48576118F1 is a 33, 554, 432 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell. The µPD48576118F1 integrate unique synchronous peripheral circuitry and a burst counter. All input registers controlled by an input clock pair (CK and CK#) are latched on the positive edge of CK and CK#. These products are suitable for application which require synchronous operation, High-Speed, low voltage, high density and wide bit configuration.

Documents

Technical documentation and resources