Discrete Semiconductor Products

MPSH17G

Obsolete

RF TRANS NPN 15V 800MHZ TO92-3

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

RF TRANS NPN 15V 800MHZ TO92-3

Technical Specifications

Parameters and characteristics for this part

Specification	MPSH17G

DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	25
Frequency - Transition	800 MHz
Gain	24 dB
Mounting Type	Through Hole
Noise Figure (dB Typ @ f)	6 dB
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-92-3 Long Body, TO-226-3
Power - Max [Max]	350 mW
Supplier Device Package	TO-92
Supplier Device Package	TO-226
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	15 V

CATV Transistor

Part	Power - Max [Max]	Package / Case	Noise Figure (dB Typ @ f)	Transistor Type	Gain	Mounting Type	Voltage - Collector Emitter Breakdown (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Supplier Device Package	Frequency - Transition	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package
ON Semiconductor MPSH17_D75Z	350 mW	TO-226-3 TO-92-3	6 dB	NPN	24 dB	Through Hole	15 V	25	TO-92-3	800 MHz
ON Semiconductor MPSH17G	350 mW	TO-226-3 TO-92-3 Long Body	6 dB	NPN	24 dB	Through Hole	15 V	25	TO-92	800 MHz	-55 °C	150 °C	TO-226
ON Semiconductor MPSH17	350 mW	TO-226-3 TO-92-3	6 dB	NPN	24 dB	Through Hole	15 V	25	TO-92-3	800 MHz	-55 °C	150 °C
ON Semiconductor MPSH17_D26Z	350 mW	TO-226-3 TO-92-3	6 dB	NPN	24 dB	Through Hole	15 V	25	TO-92-3	800 MHz

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

NPN Silicon

Technical documentation and resources