Discrete Semiconductor Products

RD3L08BGNTL

NRND

TRANSISTOR POWER MOSFET N-CH 60V 80A 3-PIN TO-252 EMBOSS T/R

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Discrete Semiconductor Products

NRND

TRANSISTOR POWER MOSFET N-CH 60V 80A 3-PIN TO-252 EMBOSS T/R

Technical Specifications

Parameters and characteristics for this part

Specification	RD3L08BGNTL

Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	71 nC
Input Capacitance (Ciss) (Max) @ Vds	3620 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max)	119 W
Rds On (Max) @ Id, Vgs	5.5 mOhm
Supplier Device Package	TO-252
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Vgs(th) (Max) @ Id	Package / Case	Supplier Device Package	Power Dissipation (Max)	Operating Temperature	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Technology	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Drain to Source Voltage (Vdss)	FET Type	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs
Rohm Semiconductor RD3L08BGNTL	2.5 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	TO-252	119 W	150 °C	Surface Mount	3620 pF	MOSFET (Metal Oxide)	4.5 V 10 V	20 V	60 V	N-Channel	5.5 mOhm	71 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 60 V 80A (Tc) 119W (Tc) Surface Mount TO-252

Technical documentation and resources