Discrete Semiconductor Products

MCP120N08Y-BP

Active

N-CHANNEL MOSFET,TO-220AB(H)

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

N-CHANNEL MOSFET,TO-220AB(H)

Technical Specifications

Parameters and characteristics for this part

Specification	MCP120N08Y-BP

Current - Continuous Drain (Id) @ 25°C	120 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [x]	73 nC
Input Capacitance (Ciss) (Max) @ Vds	5666 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	190 W
Rds On (Max) @ Id, Vgs	4.8 mOhm
Supplier Device Package	TO-220AB (H)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Power Dissipation (Max) [Max]	Technology	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	FET Type	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [x]	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Vgs (Max)	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds
Micro Commercial Components MCP120N08Y-BP	190 W	MOSFET (Metal Oxide)	4 V	120 A	80 V	N-Channel	TO-220AB (H)	-55 °C	150 °C	4.8 mOhm	73 nC	10 V	TO-220-3	20 V	Through Hole	5666 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 80 V 120A (Tc) 190W Through Hole TO-220AB (H)

Technical documentation and resources