Discrete Semiconductor Products

1N4003B-G

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DIODE GEN PURP 200V 1A DO41

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Discrete Semiconductor Products

Active

DIODE GEN PURP 200V 1A DO41

Technical Specifications

Parameters and characteristics for this part

Specification	1N4003B-G

Capacitance	15 pF
Current - Average Rectified (Io)	1 A
Current - Reverse Leakage	5 µA
Mounting Type	Through Hole
Operating Temperature - Junction (Max)	150 °C
Operating Temperature - Junction (Min)	-55 °C
Package / Case	Axial, DO-204AL, DO-41
Package Name	DO-41
Speed	Standard Recovery
Speed - Fast Recovery (Minimum)	200 mA, 500 ns
Speed - Recovery Current	200 mA, 200 mA
Speed - Recovery Time	500 ns
Technology	Standard
Voltage - DC Reverse (Vr) (Max)	200 V
Voltage - Forward (Vf) (Max)	1.1 V

Part	Technology	Package Name	Voltage - Forward (Vf) (Max)	Capacitance	Voltage - DC Reverse (Vr) (Max)	Current - Reverse Leakage	Operating Temperature - Junction (Max)	Operating Temperature - Junction (Min)	Current - Average Rectified (Io)	Speed - Fast Recovery (Minimum)	Speed	Speed - Recovery Current	Speed - Recovery Time	Package / Case	Mounting Type
Comchip Technology 1N4003B-G	Standard	DO-41	1.1 V	15 pF	200 V	5 µA	150 °C	-55 °C	1 A	200 mA 500 ns	Standard Recovery	200 mA 200 mA	500 ns	Axial DO-204AL DO-41	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	Bulk	1000	$ 0.04	1m+
	N/A	0	$ 0.05	1m+

3D models and CAD resources for this part

General part information

Diode 200 V 1A Through Hole DO-41

Technical documentation and resources

No documents available