Discrete Semiconductor Products

FDR8702H

Obsolete

MOSFET N/P-CH 20V 3.6A SUPERSOT

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N/P-CH 20V 3.6A SUPERSOT

Technical Specifications

Parameters and characteristics for this part

Specification	FDR8702H

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	3.6 A, 2.6 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	10 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	650 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-TSOP
Package / Case	0.13 in
Package / Case [y]	3.3 mm
Power - Max [Max]	800 mW
Rds On (Max) @ Id, Vgs	38 mOhm
Supplier Device Package	SuperSOT™-8
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.5 V

Part	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Power - Max [Max]	Mounting Type	Package / Case [y]	Package / Case	Package / Case	Technology	FET Feature	Drain to Source Voltage (Vdss)	Configuration	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]	Operating Temperature [Min]	Operating Temperature [Max]
ON Semiconductor FDR8702H	38 mOhm	2.6 A 3.6 A	1.5 V	800 mW	Surface Mount	3.3 mm	8-TSOP	0.13 in	MOSFET (Metal Oxide)	Logic Level Gate	20 V	N and P-Channel	10 nC	SuperSOT™-8	650 pF	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	398	$ 0.75

General part information

Mosfet Array 20V 3.6A, 2.6A 800mW Surface Mount SuperSOT™-8

Technical documentation and resources

No documents available