SI5446DU-T1-GE3

Obsolete

MOSFET N-CH 30V 25A PPAK

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 30V 25A PPAK

Technical Specifications

Parameters and characteristics for this part

Specification	SI5446DU-T1-GE3

Current - Continuous Drain (Id) @ 25°C	25 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	30 nC
Input Capacitance (Ciss) (Max) @ Vds	1610 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® ChipFET™ Single
Power Dissipation (Max)	31 W
Rds On (Max) @ Id, Vgs	6.4 mOhm
Supplier Device Package	PowerPAK® ChipFet Single
Technology	MOSFET (Metal Oxide)
Vgs (Max)	-16 V, 20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Technology	Package / Case	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds
Vishay General Semiconductor - Diodes Division SI5446DU-T1-GE3	30 V	4.5 V 10 V	N-Channel	25 A	PowerPAK® ChipFet Single	MOSFET (Metal Oxide)	PowerPAK® ChipFET™ Single	2.5 V	-55 °C	150 °C	-16 V 20 V	Surface Mount	30 nC	31 W	6.4 mOhm	1610 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 30 V 25A (Tc) 31W (Tc) Surface Mount PowerPAK® ChipFet Single

Technical documentation and resources