Discrete Semiconductor Products

SI2102AHE3-TP

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Discrete Semiconductor Products

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Technical Specifications

Parameters and characteristics for this part

Specification	SI2102AHE3-TP

Current - Continuous Drain (Id) @ 25°C	2 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	3.2 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	210 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-70, SOT-323
Power Dissipation (Max) [Max]	350 mW
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	80 mOhm
Supplier Device Package	SOT-323
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	1.1 V

Part	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Mounting Type	Vgs (Max)	Power Dissipation (Max) [Max]	Technology	FET Type	Supplier Device Package	Rds On (Max) @ Id, Vgs	Qualification	Gate Charge (Qg) (Max) @ Vgs	Grade
Micro Commercial Components SI2102A-TP	70 mOhm	220 pF	3 A	1.1 V	20 V	3.6 nC	-55 °C	150 °C	2.5 V 4.5 V	SC-70 SOT-323	Surface Mount	10 V	200 mW	MOSFET (Metal Oxide)	N-Channel	SOT-323
Micro Commercial Components SI2102AHE3-TP		210 pF	2 A	1.1 V	20 V		-55 °C	150 °C	2.5 V 4.5 V	SC-70 SOT-323	Surface Mount	10 V	350 mW	MOSFET (Metal Oxide)	N-Channel	SOT-323	80 mOhm	AEC-Q101	3.2 nC	Automotive

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	3000	$ 0.05

General part information

N-Channel 20 V 2A (Ta) 350mW Surface Mount SOT-323

Technical documentation and resources