Discrete Semiconductor Products

BC517,112

Obsolete

TRANS NPN DARL 30V 0.5A TO92-3

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

TRANS NPN DARL 30V 0.5A TO92-3

Technical Specifications

Parameters and characteristics for this part

Specification	BC517,112

Current - Collector (Ic) (Max) [Max]	500 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	30000
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-226-3, TO-92-3
Power - Max [Max]	625 mW
Supplier Device Package	TO-92-3
Vce Saturation (Max) @ Ib, Ic [Max]	1 V
Voltage - Collector Emitter Breakdown (Max) [Max]	30 V

Part	Vce Saturation (Max) @ Ib, Ic [Max]	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Operating Temperature	Power - Max [Max]	Package / Case	Mounting Type
Freescale Semiconductor - NXP BC517,116	1 V	TO-92-3	500 mA	30000	100 nA	30 V	150 °C	625 mW	TO-226-3 TO-92-3	Through Hole
Freescale Semiconductor - NXP BC517,112	1 V	TO-92-3	500 mA	30000	100 nA	30 V	150 °C	625 mW	TO-226-3 TO-92-3	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor NPN - Darlington 30 V 500 mA 220MHz 625 mW Through Hole TO-92-3

Technical documentation and resources