TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Discrete Semiconductor Products

SQM50N04-4M1_GE3

LTB

Vishay General Semiconductor - Diodes Division

MOSFET N-CH 40V 50A TO263

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Discrete Semiconductor Products

SQM50N04-4M1_GE3

LTB

Vishay General Semiconductor - Diodes Division

MOSFET N-CH 40V 50A TO263

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DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	SQM50N04-4M1_GE3

Current - Continuous Drain (Id) @ 25°C	50 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	105 nC
Input Capacitance (Ciss) (Max) @ Vds	6715 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	150 W
Rds On (Max) @ Id, Vgs [Max]	4.1 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

SQM50 Series

Part	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Technology	Mounting Type	Vgs(th) (Max) @ Id	Supplier Device Package	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs [Max]	Power Dissipation (Max)	FET Type	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Qualification	Grade
Vishay General Semiconductor - Diodes Division SQM50N04-4M1_GE3	20 V	6715 pF	MOSFET (Metal Oxide)	Surface Mount	3.5 V	TO-263 (D2PAK)	40 V	-55 °C	175 ░C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	10 V	50 A	4.1 mOhm	150 W	N-Channel	105 nC
Vishay General Semiconductor - Diodes Division SQM50P04-09L_GE3	20 V	6045 pF	MOSFET (Metal Oxide)	Surface Mount	2.5 V	TO-263 (D2PAK)	40 V	-55 °C	175 ░C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	4.5 V 10 V	50 A		150 W	P-Channel		9.4 mOhm	145 nC	AEC-Q101	Automotive
Vishay General Semiconductor - Diodes Division SQM50P08-25L_GE3	20 V	5350 pF	MOSFET (Metal Oxide)	Surface Mount	2.5 V	TO-263 (D2PAK)	80 V	-55 °C	175 ░C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	4.5 V 10 V	50 A		150 W	P-Channel	137 nC	25 mOhm		AEC-Q101	Automotive
Vishay General Semiconductor - Diodes Division SQM50P03-07_GE3	20 V	5380 pF	MOSFET (Metal Oxide)	Surface Mount	2.5 V	TO-263 (D2PAK)	30 V			D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	4.5 V 10 V	50 A	7 mOhm	150 W	P-Channel	155 nC			AEC-Q101	Automotive
Vishay General Semiconductor - Diodes Division SQM50N04-4M0L_GE3	20 V	6100 pF	MOSFET (Metal Oxide)	Surface Mount	2.5 V	TO-263 (D2PAK)	40 V	-55 °C	175 ░C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	4.5 V 10 V	50 A		150 W	N-Channel		4 mOhm	130 nC	AEC-Q101	Automotive
Vishay General Semiconductor - Diodes Division SQM50P06-15L_GE3	20 V	6120 pF	MOSFET (Metal Oxide)	Surface Mount	2.5 V	TO-263 (D2PAK)	60 V	-55 °C	175 ░C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	4.5 V 10 V	50 A	15 mOhm	150 W	P-Channel	155 nC			AEC-Q101	Automotive

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 2.79
	Digi-Reel®	1	$ 2.79
	Tape & Reel (TR)	800	$ 1.56
		1600	$ 1.32
		2400	$ 1.26
		5600	$ 1.21

Description

General part information

SQM50 Series

N-Channel 40 V 50A (Tc) 150W (Tc) Surface Mount TO-263 (D2PAK)

Documents

Technical documentation and resources