SQJ262EP-T1_GE3

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MOSFET 2N-CH 60V 15A PPAK SO8

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Discrete Semiconductor Products

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MOSFET 2N-CH 60V 15A PPAK SO8

Technical Specifications

Parameters and characteristics for this part

Specification	SQJ262EP-T1_GE3

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	15 A, 40 A
Drain to Source Voltage (Vdss)	60 V
Gate Charge (Qg) (Max) @ Vgs	10 nC
Gate Charge (Qg) (Max) @ Vgs	23 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	550 pF, 1260 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8 Dual
Power - Max	48 W, 27 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	15.5 mOhm, 35.5 mOhm
Supplier Device Package	PowerPAK® SO-8 Dual Asymmetric
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5 V

Part	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Technology	Configuration	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Qualification	Vgs(th) (Max) @ Id	Power - Max	Grade	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Gate Charge (Qg) (Max) @ Vgs
Vishay General Semiconductor - Diodes Division SQJ262EP-T1_GE3	15 A 40 A	Surface Mount	MOSFET (Metal Oxide)	2 N-Channel (Dual)	60 V	15.5 mOhm 35.5 mOhm	PowerPAK® SO-8 Dual	550 pF 1260 pF	-55 °C	175 ░C	AEC-Q101	2.5 V	27 W 48 W	Automotive	PowerPAK® SO-8 Dual Asymmetric	10 nC	23 nC

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General part information

Mosfet Array 60V 15A (Tc), 40A (Tc) 27W (Tc), 48W (Tc) Surface Mount PowerPAK® SO-8 Dual Asymmetric

Technical documentation and resources