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RJP4301APP-M0#T2
Discrete Semiconductor Products

RJP4301APP-M0#T2

LTB

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RJP4301APP-M0#T2
Discrete Semiconductor Products

RJP4301APP-M0#T2

LTB

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationRJP4301APP-M0#T2
Current - Collector Pulsed (Icm)200 A
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-40 °C
Package / CaseTO-220-3 Full Pack
Power - Max [Max]30 W
Supplier Device PackageTO-220FL
Td (on/off) @ 25°C100 ns, 50 ns
Test Condition26 V, 200 A, 300 V, 30 Ohm
Vce(on) (Max) @ Vge, Ic10 V
Voltage - Collector Emitter Breakdown (Max) [Max]430 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.00

Description

General part information

RJP4301APP-M0 Series

Renesas provides various IGBTs that are best support for digital still cameras, analog cameras and so on.

Documents

Technical documentation and resources