Discrete Semiconductor Products

RDX100N60FU6

Obsolete

MOSFET N-CH 600V 10A TO220FM

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 600V 10A TO220FM

Technical Specifications

Parameters and characteristics for this part

Specification	RDX100N60FU6

Current - Continuous Drain (Id) @ 25°C	10 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	45 nC
Input Capacitance (Ciss) (Max) @ Vds	1600 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	45 W
Rds On (Max) @ Id, Vgs	650 mOhm
Supplier Device Package	TO-220FM
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V

Part	Current - Continuous Drain (Id) @ 25°C	FET Type	Drain to Source Voltage (Vdss)	Vgs (Max)	Supplier Device Package	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Technology	Mounting Type	Rds On (Max) @ Id, Vgs	Operating Temperature	Gate Charge (Qg) (Max) @ Vgs [Max]
Rohm Semiconductor RDX100N60FU6	10 A	N-Channel	600 V	30 V	TO-220FM	45 W	1600 pF	10 V	TO-220-3 Full Pack	MOSFET (Metal Oxide)	Through Hole	650 mOhm	150 °C	45 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 600 V 10A (Ta) 45W (Tc) Through Hole TO-220FM

Technical documentation and resources