Discrete Semiconductor Products

MBR60H100CT

Obsolete

DIODE ARR SCHOTT 100V 30A TO220

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

DIODE ARR SCHOTT 100V 30A TO220

Technical Specifications

Parameters and characteristics for this part

Specification	MBR60H100CT

Current - Average Rectified (Io) (per Diode)	30 A
Current - Reverse Leakage @ Vr	10 µA
Diode Configuration	1 Pair Common Cathode
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 °C
Package / Case	TO-220-3
Speed	200 mA, 500 ns
Supplier Device Package	TO-220
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	100 V
Voltage - Forward (Vf) (Max) @ If	840 mV

Schottky Barrier Rectifier, H-Series, 100 V, 60 A

Part	Speed	Current - Reverse Leakage @ Vr	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io) (per Diode)	Diode Configuration	Technology	Operating Temperature - Junction [Max]	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Operating Temperature - Junction [Min]
ON Semiconductor MBR60H100CT	200 mA 500 ns	10 µA	TO-220-3	100 V	30 A	1 Pair Common Cathode	Schottky	175 °C	TO-220	840 mV	Through Hole
ON Semiconductor MBR60L45CTG	200 mA 500 ns	1.2 mA	TO-220-3	45 V	30 A	1 Pair Common Cathode	Schottky	175 ░C	TO-220	550 mV	Through Hole	-65 C
ON Semiconductor MBR60H100CTG	200 mA 500 ns	10 µA	TO-220-3	100 V	30 A	1 Pair Common Cathode	Schottky	175 °C	TO-220	840 mV	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

This product is an enhanced Schottky Power Rectifier with lower Vf and higher surge to provide lower power loss and higher efficiency.

Technical documentation and resources