Specification	TPS1100DR

Current - Continuous Drain (Id) @ 25°C	1.6 A
Drain to Source Voltage (Vdss)	15 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 2.7 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	5.45 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	791 mW
Rds On (Max) @ Id, Vgs	180 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	2 V
Vgs (Max) [Min]	-15 V
Vgs(th) (Max) @ Id	1.5 V

TPS1100 Series

Single P-channel Enhancement-Mode MOSFET

Part	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Technology	Power Dissipation (Max) [Max]	FET Type	Package / Case	Package / Case [custom]	Package / Case [custom]	Vgs (Max) [Max]	Vgs (Max) [Min]	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Package / Case [y]	Package / Case [x]
Texas Instruments TPS1100PWR	8-TSSOP	5.45 nC	180 mOhm	1.5 V	MOSFET (Metal Oxide)	504 mW	P-Channel	8-TSSOP	0.173 "	4.4 mm	2 V	-15 V	Surface Mount	150 °C	-40 °C	15 V	1.27 A	2.7 V 10 V
Texas Instruments TPS1100DR	8-SOIC	5.45 nC	180 mOhm	1.5 V	MOSFET (Metal Oxide)		P-Channel	8-SOIC			2 V	-15 V	Surface Mount	150 °C	-40 °C	15 V	1.6 A	2.7 V 10 V	791 mW	3.9 mm	0.154 in
Texas Instruments TPS1100D	8-SOIC	5.45 nC	180 mOhm	1.5 V	MOSFET (Metal Oxide)		P-Channel	8-SOIC			2 V	-15 V	Surface Mount	150 °C	-40 °C	15 V	1.6 A	2.7 V 10 V	791 mW	3.9 mm	0.154 in

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 1.62
		10	$ 1.32
		100	$ 1.03
		500	$ 0.87
		1000	$ 0.71
	Digi-Reel®	1	$ 1.62
		10	$ 1.32
		100	$ 1.03
		500	$ 0.87
		1000	$ 0.71
	Tape & Reel (TR)	2500	$ 0.67
		5000	$ 0.64
		12500	$ 0.61
Texas Instruments	LARGE T&R	1	$ 1.25
		100	$ 1.03
		250	$ 0.74
		1000	$ 0.56

Description

General part information

TPS1100 Series

The TPS1100 is a single P-channel enhancement-mode MOSFET. The device has been optimized for 3-V or 5-V power distribution in battery-powered systems by means of Texas Instruments LinBiCMOSTMprocess. With a maximum VGS(th)of -1.5 V and an IDSSof only 0.5 uA, the TPS1100 is the ideal high-side switch for low-voltage, portable battery-management systems where maximizing battery life is a primary concern. The low rDS(on)and excellent ac characteristics (rise time 10 ns typical) make the TPS1100 the logical choice for low-voltage switching applications such as power switches for pulse-width-modulated (PWM) controllers or motor/bridge drivers.

The ultrathin thin shrink small-outline package or TSSOP (PW) version with its smaller footprint and reduction in height fits in places where other P-channel MOSFETs cannot. The size advantage is especially important where board real estate is at a premium and height restrictions do not allow for a small-outline integrated circuit (SOIC) package.

Such applications include notebook computers, personal digital assistants (PDAs), cellular telephones, and PCMCIA cards. For existing designs, the D-packaged version has a pinout common with other p-channel MOSFETs in SOIC packages.

Documents

Technical documentation and resources

Single P-Channel Enhancement-Mode MOSFETs datasheet (Rev. C)

Data sheet