Discrete Semiconductor Products

BSH105,215

NRND

MOSFET N-CH 20V 1.05A TO236AB

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Discrete Semiconductor Products

NRND

MOSFET N-CH 20V 1.05A TO236AB

Technical Specifications

Parameters and characteristics for this part

Specification	BSH105,215

Current - Continuous Drain (Id) @ 25°C	1.05 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [custom]	4.5 V
Gate Charge (Qg) (Max) @ Vgs [Max] [custom]	3.9 nC
Input Capacitance (Ciss) (Max) @ Vds	152 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max) [Max]	417 mW
Rds On (Max) @ Id, Vgs	200 mOhm
Supplier Device Package	TO-236AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	570 mV

Part	Vgs (Max)	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [custom]	Gate Charge (Qg) (Max) @ Vgs [Max] [custom]	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Package / Case	Supplier Device Package	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs
Freescale Semiconductor - NXP BSH105,235	8 V	Surface Mount	152 pF	4.5 V	3.9 nC	570 mV	20 V	417 mW	MOSFET (Metal Oxide)	-55 °C	150 °C	1.05 A	SC-59 SOT-23-3 TO-236-3	TO-236AB	N-Channel	1.8 V 4.5 V	200 mOhm
Freescale Semiconductor - NXP BSH105,215	8 V	Surface Mount	152 pF	4.5 V	3.9 nC	570 mV	20 V	417 mW	MOSFET (Metal Oxide)	-55 °C	150 °C	1.05 A	SC-59 SOT-23-3 TO-236-3	TO-236AB	N-Channel	1.8 V 4.5 V	200 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 20 V 1.05A (Ta) 417mW (Ta) Surface Mount TO-236AB

Technical documentation and resources