Discrete Semiconductor Products

MMFT5P03HDT1

Obsolete

MOSFET P-CH 30V 3.7A SOT223

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET P-CH 30V 3.7A SOT223

Technical Specifications

Parameters and characteristics for this part

Specification	MMFT5P03HDT1

Current - Continuous Drain (Id) @ 25°C	3.7 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	24 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	950 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-261AA, TO-261-4
Power Dissipation (Max)	1.56 W
Rds On (Max) @ Id, Vgs [Max]	100 mOhm
Supplier Device Package	SOT-223 (TO-261)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs [Max]	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Supplier Device Package	Vgs(th) (Max) @ Id	Technology	Power Dissipation (Max)
ON Semiconductor MMFT5P03HDT1	950 pF	TO-261-4 TO-261AA	P-Channel	-55 °C	150 °C	100 mOhm	Surface Mount	24 nC	20 V	3.7 A	4.5 V 10 V	30 V	SOT-223 (TO-261)	3 V	MOSFET (Metal Oxide)	1.56 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 30 V 3.7A (Ta) 1.56W (Ta) Surface Mount SOT-223 (TO-261)

Technical documentation and resources

No documents available