FDV303N
ActiveMOSFET TRANSISTOR, N CHANNEL, 680 MA, 25 V, 0.33 OHM, 4.5 V, 800 MV ROHS COMPLIANT: YES
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FDV303N
ActiveMOSFET TRANSISTOR, N CHANNEL, 680 MA, 25 V, 0.33 OHM, 4.5 V, 800 MV ROHS COMPLIANT: YES
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Technical Specifications
Parameters and characteristics for this part
| Specification | FDV303N |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 680 mA |
| Drain to Source Voltage (Vdss) | 25 V |
| Drive Voltage (Max Rds On, Min Rds On) [Max] | 2.7 V |
| Drive Voltage (Max Rds On, Min Rds On) [Min] | 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 2.3 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 50 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SOT-23-3, TO-236-3, SC-59 |
| Power Dissipation (Max) [Max] | 350 mW |
| Rds On (Max) @ Id, Vgs | 450 mOhm |
| Supplier Device Package | SOT-23-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 8 V |
| Vgs(th) (Max) @ Id | 1.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 0.34 | |
| 10 | $ 0.21 | |||
| 100 | $ 0.13 | |||
| 500 | $ 0.10 | |||
| 1000 | $ 0.09 | |||
| Digi-Reel® | 1 | $ 0.34 | ||
| 10 | $ 0.21 | |||
| 100 | $ 0.13 | |||
| 500 | $ 0.10 | |||
| 1000 | $ 0.09 | |||
| Tape & Reel (TR) | 3000 | $ 0.07 | ||
| 6000 | $ 0.07 | |||
| 9000 | $ 0.06 | |||
| 15000 | $ 0.06 | |||
| 21000 | $ 0.06 | |||
| 30000 | $ 0.05 | |||
| 75000 | $ 0.05 | |||
| 150000 | $ 0.05 | |||
| Newark | Each (Supplied on Full Reel) | 3000 | $ 0.09 | |
| 6000 | $ 0.09 | |||
| 12000 | $ 0.09 | |||
| 18000 | $ 0.08 | |||
| 30000 | $ 0.08 | |||
| ON Semiconductor | N/A | 1 | $ 0.05 | |
Description
General part information
FDV303N Series
These N-Channel enhancement mode field effect transistors are produced using a proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance at low gate drive conditions. This device is designed especially for application in battery circuits using either one lithium or three cadmium or NMH cells. It can be used as an inverter or for high-efficiency miniature discrete DC/DC conversion in compact portable electronic devices like cellular phones and pagers. This device has excellent on-state resistance even at gate drive voltages as low as 2.5 volts.
Documents
Technical documentation and resources
