NCP81061MNTWG

LTB

IC GATE DRVR HALF-BRIDGE QFN

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Integrated Circuits (ICs)

LTB

IC GATE DRVR HALF-BRIDGE QFN

Technical Specifications

Parameters and characteristics for this part

Specification	NCP81061MNTWG

Channel Type	Synchronous
Driven Configuration	Half-Bridge
Gate Type	N-Channel MOSFET
High Side Voltage - Max (Bootstrap) [Max]	35 V
Input Type	Non-Inverting
Logic Voltage - VIL, VIH	1 V, 2 V
Number of Drivers	4
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-10 °C
Rise / Fall Time (Typ) [custom]	11 ns
Rise / Fall Time (Typ) [custom]	16 ns
Voltage - Supply [Max]	13.2 V
Voltage - Supply [Min]	4.5 V

Part	Gate Type	Driven Configuration	Operating Temperature [Min]	Operating Temperature [Max]	Channel Type	Number of Drivers	Voltage - Supply [Min]	Voltage - Supply [Max]	High Side Voltage - Max (Bootstrap) [Max]	Input Type	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Logic Voltage - VIL, VIH
ON Semiconductor NCP81061MNTWG	N-Channel MOSFET	Half-Bridge	-10 °C	150 °C	Synchronous	4	4.5 V	13.2 V	35 V	Non-Inverting	11 ns	16 ns	1 V 2 V

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General part information

Half-Bridge Gate Driver IC Non-Inverting

Technical documentation and resources