IXTA28P065T
ActiveDISCMSFT PCHAN-TRENCH GATE TO-263D2/ TUBE
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IXTA28P065T
ActiveDISCMSFT PCHAN-TRENCH GATE TO-263D2/ TUBE
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | IXTA28P065T |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 28 A |
| Drain to Source Voltage (Vdss) | 65 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 46 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 2030 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263AB, TO-263-3 |
| Power Dissipation (Max) | 83 W |
| Rds On (Max) @ Id, Vgs | 45 mOhm |
| Supplier Device Package | TO-263AA |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 15 V |
| Vgs(th) (Max) @ Id | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IXTA28P065T Series
Trench P-Channel MOSFETs are well suited for ‘high side’ switching applications where a simple drive circuit referenced to ground can be employed, avoiding additional ‘high side’ driver circuitry commonly involved when using an N-Channel MOSFET. This enables designers to reduce component count, thereby improving drive circuit simplicity and over-all component cost structure. Furthermore, it allows for the design of a complementary power output stage with a corresponding N-Channel MOSFET, for a power half bridge stage paired with a simple drive circuit. Advantages: Low gate charge resulting in simple drive requirement High power density Fast switching
Documents
Technical documentation and resources