Discrete Semiconductor Products

SQ1470EH-T1-GE3

Obsolete

MOSFET N-CH 30V 2.8A SC70

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 30V 2.8A SC70

Technical Specifications

Parameters and characteristics for this part

Specification	SQ1470EH-T1-GE3

Current - Continuous Drain (Id) @ 25°C	2.8 A
Drain to Source Voltage (Vdss)	30 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	6.6 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	610 pF
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Rds On (Max) @ Id, Vgs	65 mOhm
Supplier Device Package	SC-70-6
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.6 V

Part	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Supplier Device Package	Technology	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	FET Type	Package / Case	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]
Vishay General Semiconductor - Diodes Division SQ1470EH-T1-GE3	6.6 nC	2.8 A	65 mOhm	SC-70-6	MOSFET (Metal Oxide)	30 V	1.6 V	N-Channel	6-TSSOP SC-88 SOT-363	Surface Mount	610 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 30 V 2.8A (Tc) Surface Mount SC-70-6

Technical documentation and resources