Specification	KSC5019MTA

Current - Collector (Ic) (Max) [Max]	2 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	140
Frequency - Transition	150 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-226-3, TO-92-3
Power - Max [Max]	750 mW
Supplier Device Package	TO-92-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic [Max]	500 mV
Voltage - Collector Emitter Breakdown (Max)	10 V

KSC5019 Series

Part	Vce Saturation (Max) @ Ib, Ic [Max]	Mounting Type	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max)	Operating Temperature	Transistor Type	Package / Case	Current - Collector (Ic) (Max) [Max]	Frequency - Transition	Current - Collector Cutoff (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Supplier Device Package
ON Semiconductor KSC5019MTA	500 mV	Through Hole	750 mW	10 V	150 °C	NPN	TO-226-3 TO-92-3	2 A	150 MHz	100 nA	140	TO-92-3
ON Semiconductor KSC5019NTA	500 mV	Through Hole	750 mW	10 V	150 °C	NPN	TO-226-3 TO-92-3	2 A	150 MHz	100 nA	300	TO-92-3
ON Semiconductor KSC5019MBU	500 mV	Through Hole	750 mW	10 V	150 °C	NPN	TO-226-3 TO-92-3	2 A	150 MHz	100 nA	200 hFE	TO-92-3

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor NPN 10 V 2 A 150MHz 750 mW Through Hole TO-92-3

Technical documentation and resources