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SOT1061
Discrete Semiconductor Products

PBSS5630PA,115

Active
Nexperia USA Inc.

BIPOLAR TRANSISTORS - BJT 100 V, 1 A NPN LOW VCESAT (BISS) TRANSISTOR

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SOT1061
Discrete Semiconductor Products

PBSS5630PA,115

Active
Nexperia USA Inc.

BIPOLAR TRANSISTORS - BJT 100 V, 1 A NPN LOW VCESAT (BISS) TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

SpecificationPBSS5630PA,115
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]190
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / Case3-PowerUDFN
Power - Max [Max]2.1 W
Supplier Device Package3-HUSON
Supplier Device Package [x]2
Supplier Device Package [y]2
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic350 mV
Voltage - Collector Emitter Breakdown (Max) [Max]30 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.43
10$ 0.36
100$ 0.25
500$ 0.20
1000$ 0.16
Digi-Reel® 1$ 0.43
10$ 0.36
100$ 0.25
500$ 0.20
1000$ 0.16
N/A 3007$ 0.89
Tape & Reel (TR) 3000$ 0.12
MouserN/A 1$ 0.62
10$ 0.40
100$ 0.28
500$ 0.21
1000$ 0.18
3000$ 0.15
6000$ 0.14
9000$ 0.14

Description

General part information

PBSS5630 Series

PNP low VCEsatBreakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability.