
Discrete Semiconductor Products
PBSS5630PA,115
ActiveNexperia USA Inc.
BIPOLAR TRANSISTORS - BJT 100 V, 1 A NPN LOW VCESAT (BISS) TRANSISTOR
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Discrete Semiconductor Products
PBSS5630PA,115
ActiveNexperia USA Inc.
BIPOLAR TRANSISTORS - BJT 100 V, 1 A NPN LOW VCESAT (BISS) TRANSISTOR
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | PBSS5630PA,115 |
|---|---|
| Current - Collector Cutoff (Max) [Max] | 100 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 190 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | 3-PowerUDFN |
| Power - Max [Max] | 2.1 W |
| Supplier Device Package | 3-HUSON |
| Supplier Device Package [x] | 2 |
| Supplier Device Package [y] | 2 |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic | 350 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 30 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
PBSS5630 Series
PNP low VCEsatBreakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability.
Documents
Technical documentation and resources