Discrete Semiconductor Products

MCP80P06Y-BP

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P-CHANNEL MOSFET,TO-220AB(H)

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Discrete Semiconductor Products

Active

P-CHANNEL MOSFET,TO-220AB(H)

Technical Specifications

Parameters and characteristics for this part

Specification	MCP80P06Y-BP

Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	88 nC
Input Capacitance (Ciss) (Max) @ Vds	5810 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	89 W
Rds On (Max) @ Id, Vgs [Max]	8.4 mOhm
Supplier Device Package	TO-220AB (H)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	18 V
Vgs(th) (Max) @ Id	3.5 V

Part	Technology	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	FET Type	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Supplier Device Package	Rds On (Max) @ Id, Vgs [Max]	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)
Micro Commercial Components MCP80P06Y-BP	MOSFET (Metal Oxide)	TO-220-3	-55 °C	150 °C	18 V	P-Channel	88 nC	5810 pF	Through Hole	TO-220AB (H)	8.4 mOhm	89 W	3.5 V	6 V 10 V	60 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 60 V 80A (Tc) 89W Through Hole TO-220AB (H)

Technical documentation and resources