Discrete Semiconductor Products

IRFPS30N60KPBF

Obsolete

MOSFET N-CH 600V 30A SUPER247

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 600V 30A SUPER247

Technical Specifications

Parameters and characteristics for this part

Specification	IRFPS30N60KPBF

Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	220 nC
Input Capacitance (Ciss) (Max) @ Vds	5870 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-274AA
Power Dissipation (Max)	450 W
Rds On (Max) @ Id, Vgs	190 mOhm
Supplier Device Package	SUPER-247™ (TO-274AA)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Mounting Type	FET Type	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Power Dissipation (Max)	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Technology	Package / Case
Vishay General Semiconductor - Diodes Division IRFPS30N60KPBF	190 mOhm	5 V	-55 °C	150 °C	30 A	Through Hole	N-Channel	220 nC	10 V	SUPER-247™ (TO-274AA)	450 W	30 V	5870 pF	600 V	MOSFET (Metal Oxide)	TO-274AA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 600 V 30A (Tc) 450W (Tc) Through Hole SUPER-247™ (TO-274AA)

Technical documentation and resources