Discrete Semiconductor Products

PJQ4403P_R2_00001

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30V P-CHANNEL ENHANCEMENT MODE M

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Discrete Semiconductor Products

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30V P-CHANNEL ENHANCEMENT MODE M

Technical Specifications

Parameters and characteristics for this part

Specification	PJQ4403P_R2_00001

Current - Continuous Drain (Id) @ 25°C	35 A
Current - Continuous Drain (Id) @ 25°C	9.8 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	15 nC
Input Capacitance (Ciss) (Max) @ Vds	1730 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	2 W, 30 W
Rds On (Max) @ Id, Vgs	15.5 mOhm
Supplier Device Package	DFN3333-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Operating Temperature [Max]	Operating Temperature [Min]	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Mounting Type	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Supplier Device Package	Package / Case
Panjit International Inc. PJQ4403P_R2_00001	20 V	1730 pF	30 V	15.5 mOhm	150 °C	-55 °C	15 nC	MOSFET (Metal Oxide)	Surface Mount	2.5 V	2 W 30 W	35 A	9.8 A	4.5 V 10 V	P-Channel	DFN3333-8	8-PowerVDFN

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General part information

P-Channel 30 V 9.8A (Ta), 35A (Tc) 2W (Ta), 30W (Tc) Surface Mount DFN3333-8

Technical documentation and resources