Discrete Semiconductor Products

SUP90220E-GE3

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MOSFET N-CH 200V 64A TO220AB

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Discrete Semiconductor Products

Active

MOSFET N-CH 200V 64A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	SUP90220E-GE3

Current - Continuous Drain (Id) @ 25°C	64 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	7.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	48 nC
Input Capacitance (Ciss) (Max) @ Vds	1950 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	230 W
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Package / Case	Technology	Power Dissipation (Max) [Max]	Drain to Source Voltage (Vdss)	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	FET Type	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Vgs(th) (Max) @ Id	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C
Vishay General Semiconductor - Diodes Division SUP90220E-GE3	TO-220-3	MOSFET (Metal Oxide)	230 W	200 V	20 V	1950 pF	48 nC	-55 °C	175 ░C	Through Hole	N-Channel	10 V	7.5 V	4 V	TO-220AB	64 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	500	$ 1.26

General part information

N-Channel 200 V 64A (Tc) 230W (Tc) Through Hole TO-220AB

Technical documentation and resources