Technical Specifications
Parameters and characteristics for this part
| Specification | IGP15N60TXKSA1 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 30 A |
| Current - Collector Pulsed (Icm) | 45 A |
| Gate Charge | 87 nC |
| IGBT Type | Trench Field Stop |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | TO-220-3 |
| Power - Max [Max] | 130 W |
| Supplier Device Package | PG-TO220-3-1 |
| Switching Energy | 570 µJ |
| Td (on/off) @ 25°C | 188 ns, 17 ns |
| Test Condition | 15 V, 15 Ohm, 15 A, 400 V |
| Vce(on) (Max) @ Vge, Ic | 2.05 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 600 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IGP15N60 Series
Hard-switching 600 V, 15 A singleTRENCHSTOP™IGBT3 in a TO220 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.
Documents
Technical documentation and resources