PSC1065B1-QZ
Active650 V, 10 A SIC SCHOTTKY DIODE IN BARE DIE FOR AUTOMOTIVE APPLICATIONS
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PSC1065B1-QZ
Active650 V, 10 A SIC SCHOTTKY DIODE IN BARE DIE FOR AUTOMOTIVE APPLICATIONS
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | PSC1065B1-QZ |
|---|---|
| Capacitance @ Vr, F | 340 pF |
| Current - Average Rectified (Io) | 10 A |
| Current - Reverse Leakage @ Vr | 60 µA |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction | 175 °C |
| Package / Case | Die |
| Qualification | AEC-Q101 |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | 500 mA |
| Supplier Device Package | Die |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 8000 | $ 5.37 | |
Description
General part information
PSC1065B1-Q Series
Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra-high performance, low loss, high efficiency power conversion applications. The Merged PiN Schottky (MPS) diode delivered as bare die in Tape and Reel (T & R) offers temperature independent capacitive turn-off, zero recovery switching behavior combined with an outstanding figure-of-merit (QCx VF) and improves the robustness expressed in a high IFSM.
Documents
Technical documentation and resources