Discrete Semiconductor Products

1N914TAP

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DIODE GEN PURP 100V 300MA DO35

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Discrete Semiconductor Products

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DIODE GEN PURP 100V 300MA DO35

Technical Specifications

Parameters and characteristics for this part

Specification	1N914TAP

Capacitance @ Vr, F	4 pF
Current - Average Rectified (Io)	300 mA
Current - Reverse Leakage @ Vr	5 µA
Grade	Automotive
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-65 C
Package / Case	DO-204AH, Axial, DO-35
Qualification	AEC-Q101
Reverse Recovery Time (trr)	4 ns
Speed	500 ns, 200 mA
Supplier Device Package	DO-204AH
Supplier Device Package	DO-35
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	100 V
Voltage - Forward (Vf) (Max) @ If	1 V

Part	Grade	Speed	Technology	Voltage - Forward (Vf) (Max) @ If	Package / Case	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Supplier Device Package	Qualification	Mounting Type	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Reverse Recovery Time (trr)	Capacitance @ Vr, F	Speed
Vishay General Semiconductor - Diodes Division 1N914TAP	Automotive	200 mA 500 ns	Standard	1 V	Axial DO-204AH DO-35	300 mA	100 V	DO-204AH	DO-35	AEC-Q101	Through Hole	5 µA	175 ░C	-65 C	4 ns	4 pF
Vishay General Semiconductor - Diodes Division 1N914TR		200 mA	Standard	1 V	Axial DO-204AH DO-35	200 mA	75 V	DO-204AH	DO-35		Through Hole	5 µA	150 °C	-55 °C	4 ns	4 pF	Any Speed

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 100 V 300mA Through Hole DO-204AH (DO-35)

Technical documentation and resources