EiceDRIVER™ 1200 Vthree-phase gate driverwith typical 0.35 A source and 0.65 A sink currents in DSO-24 lead package forIGBT discretesandIGBT modules. By utilizing our1200 V thin-film silicon-on-insulator (SOI) technology, 6ED2230S12T provides unique, measureable advantages including three low-ohmic integrated bootstrap-diode (BSD) and industry best-in-class robustness to protect against negative transient voltage spikes. 6ED2230S12T is a high voltage, high speed IGBT gate driver with three independent high side and low side referenced output channels for three phase applications. 6ED2230S12T integrates protective features such as over-current protection with fast, and accurate fault reporting (+/-5%), shoot-through protection, and under-voltage lockout (UVLO) protection integrated in a DSO-24 package. The DSO-24 package (DSO-28 with 4-pins removed) provides the best trade-off between small IC package and clearance distances. The 6ED2230S12T is well suited for low- power designs up to 6 kW or higher power levels with additional external buffer current driver. When combined with Infineon IGBT modules such as EasyPACK 1B or EasyPACK 2B, designs achieve the best balance between performance, small-form factor, and cost. This is clearly demonstrated withEVAL-M1-6ED2230-B1. 6ED2230S12T belongs to the1200 V Level Shift gate driver family.