Discrete Semiconductor Products

IPP110N20N3GXKSA1

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INFINEON

POWER MOSFET, N CHANNEL, 200 V, 88 A, 0.0099 OHM, TO-220, THROUGH HOLE

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Search across all available documentation for this part.

DocumentsIPB107N20N3 G,IPx110N20N3 G

Discrete Semiconductor Products

IPP110N20N3GXKSA1

Active

INFINEON

POWER MOSFET, N CHANNEL, 200 V, 88 A, 0.0099 OHM, TO-220, THROUGH HOLE

Deep-Dive with AI

DocumentsIPB107N20N3 G,IPx110N20N3 G

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPP110N20N3GXKSA1

Current - Continuous Drain (Id) @ 25°C	88 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	87 nC
Input Capacitance (Ciss) (Max) @ Vds	7100 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	300 W
Rds On (Max) @ Id, Vgs	11 mOhm
Supplier Device Package	PG-TO220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

IPP110 Series

Part	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	FET Type	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Technology	Rds On (Max) @ Id, Vgs	Grade	Operating Temperature [Max]	Operating Temperature [Min]	Qualification	Power Dissipation (Max)	Mounting Type	Current - Continuous Drain (Id) @ 25°C
INFINEON IPP110N20NAAKSA1	4 V	200 V	87 nC	PG-TO220-3	N-Channel	TO-220-3	7100 pF	20 V	10 V	MOSFET (Metal Oxide)	10.7 mOhm	Automotive	175 °C	-55 °C	AEC-Q101	300 W	Through Hole	88 A
INFINEON IPP110N20N3GXKSA1	4 V	200 V	87 nC	PG-TO220-3	N-Channel	TO-220-3	7100 pF	20 V	10 V	MOSFET (Metal Oxide)	11 mOhm		175 °C	-55 °C		300 W	Through Hole	88 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Arrow	N/A	1	$ 4.21
		10	$ 4.20
		50	$ 4.17
		100	$ 4.16
		500	$ 4.15
Digikey	N/A	9556	$ 4.97
	Tube	1	$ 8.41
		10	$ 5.74
		100	$ 4.23
		500	$ 3.78
Newark	Each	1	$ 5.03
		10	$ 4.41
		25	$ 3.78

Description

General part information

IPP110 Series

The IPP110N20N3 G is a 200V N-channel Power MOSFET ideally suited for high-frequency switching, achieving excellent performance in applications such as synchronous rectification for AC-DC SMPS and motor control. The OptiMOS™ MOSFET is optimized for hard commutation ruggedness, achieving low Qrr and lower peak reverse recovery charges. It is performance leading benchmark technologies, perfectly suited for synchronous rectification in 48V systems, DC-DC converters, uninterruptable power supplies (UPS) and inverters for DC motor drives.

Documents

Technical documentation and resources

IPB107N20N3 G,IPx110N20N3 G

Datasheet