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TO-236AB
Discrete Semiconductor Products

PDTD113ZTVL

Active
Freescale Semiconductor - NXP

TRANS PREBIAS NPN TO236AB

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DocumentsDatasheet
TO-236AB
Discrete Semiconductor Products

PDTD113ZTVL

Active
Freescale Semiconductor - NXP

TRANS PREBIAS NPN TO236AB

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationPDTD113ZTVL
Current - Collector (Ic) (Max) [Max]500 mA
Current - Collector Cutoff (Max) [Max]500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]70
Mounting TypeSurface Mount
Package / CaseSOT-23-3, TO-236-3, SC-59
Resistor - Base (R1)1 kOhms
Resistor - Emitter Base (R2)10 kOhms
Supplier Device PackageTO-236AB
Transistor TypeNPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic300 mV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.32
10$ 0.22
100$ 0.11
500$ 0.09
1000$ 0.06
2000$ 0.05
5000$ 0.05
Digi-Reel® 1$ 0.32
10$ 0.22
100$ 0.11
500$ 0.09
1000$ 0.06
2000$ 0.05
5000$ 0.05
Tape & Reel (TR) 10000$ 0.03

Description

General part information

PDTD113 Series

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 500 mA Surface Mount TO-236AB

Documents

Technical documentation and resources