Specification	NXH010P120MNF1PG

Configuration	2 N-Channel (Dual) Common Source
Current - Continuous Drain (Id) @ 25°C	114 A
Drain to Source Voltage (Vdss)	1200 V
Drain to Source Voltage (Vdss)	1.2 kV
Gate Charge (Qg) (Max) @ Vgs [Max]	454 nC
Input Capacitance (Ciss) (Max) @ Vds	4707 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	Module
Power - Max [Max]	250 W
Rds On (Max) @ Id, Vgs	14 mOhm
Technology	Silicon Carbide (SiC)
Vgs(th) (Max) @ Id	4.3 V

NXH010P120MNF1 Series

SiC Module - EliteSiC 2-PACK Half Bridge Topology, 1200 V, 10 mohm SiC M1 MOSFET

Part	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Max]	Operating Temperature [Min]	Current - Continuous Drain (Id) @ 25°C	Technology	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Configuration	Vgs(th) (Max) @ Id	Power - Max [Max]	Gate Charge (Qg) (Max) @ Vgs
ON Semiconductor NXH010P120MNF1PG	Module	4707 pF	150 °C	-40 °C	114 A	Silicon Carbide (SiC)	Chassis Mount	454 nC	1200 V	1.2 kV	14 mOhm	2 N-Channel (Dual) Common Source	4.3 V	250 W
ON Semiconductor NXH010P120MNF1PTG	Module	4707 pF	150 °C	-40 °C	114 A	Silicon Carbide (SiC)	Chassis Mount	454 nC	1200 V	1.2 kV	14 mOhm	2 N-Channel (Dual) Common Source	4.3 V	250 W
ON Semiconductor NXH010P90MNF1PG	Module	7007 pF	150 °C	-40 °C	154 A	Silicon Carbide (SiC)	Chassis Mount				14 mOhm	2 N-Channel (Dual) Common Source	4.3 V	328 W	546.4 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

The NXH010P120MNF1 is a EliteSiC MOSFET module containing a 10 mohm 1200V SiC MOSFET half bridge and an NTC thermistor in an F1 module.