Discrete Semiconductor Products

SIL03N10-TP

Obsolete

MOSFET N-CH 100V 3A SOT23-6L

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 100V 3A SOT23-6L

Technical Specifications

Parameters and characteristics for this part

Specification	SIL03N10-TP

Current - Continuous Drain (Id) @ 25°C	3 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	19.2 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	810 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-6
Power Dissipation (Max) [Max]	1.5 W
Rds On (Max) @ Id, Vgs	120 mOhm
Supplier Device Package	SOT-23-6L
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	FET Type	Power Dissipation (Max) [Max]	Mounting Type	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Supplier Device Package	Technology	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)
MCC (Micro Commercial Components) SIL03N10-TP	N-Channel	1.5 W	Surface Mount	120 mOhm	100 V	150 °C	-55 °C	SOT-23-6	SOT-23-6L	MOSFET (Metal Oxide)	4.5 V 10 V	2.5 V	810 pF	19.2 nC	3 A	20 V
MCC (Micro Commercial Components) SIL03N10-TP	N-Channel	1.5 W	Surface Mount	120 mOhm	100 V	150 °C	-55 °C	SOT-23-6	SOT-23-6L	MOSFET (Metal Oxide)	4.5 V 10 V	2.5 V	810 pF	19.2 nC	3 A	20 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 100 V 3A (Ta) 1.5W Surface Mount SOT-23-6L

Technical documentation and resources