Discrete Semiconductor Products

IPD65R420CFDATMA2

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MOSFET N-CH 650V 8.7A TO252-3

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Discrete Semiconductor Products

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MOSFET N-CH 650V 8.7A TO252-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPD65R420CFDATMA2

Current - Continuous Drain (Id) @ 25°C	8.7 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	31.5 nC
Input Capacitance (Ciss) (Max) @ Vds	870 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max)	83.3 W
Rds On (Max) @ Id, Vgs	420 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

Part	Vgs (Max)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Technology	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Qualification	Grade
INFINEON IPD65R420CFDATMA2	20 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	870 pF	10 V	N-Channel	8.7 A	4.5 V	83.3 W	Surface Mount	150 °C	-55 °C	MOSFET (Metal Oxide)	420 mOhm	650 V	31.5 nC
INFINEON IPD65R420CFDATMA1	20 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	870 pF	10 V	N-Channel	8.7 A	4.5 V	83.3 W	Surface Mount	150 °C	-55 °C	MOSFET (Metal Oxide)	420 mOhm	650 V	31.5 nC	PG-TO252-3
INFINEON IPD65R420CFDAATMA1	20 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	870 pF	10 V	N-Channel	8.7 A		83.3 W	Surface Mount	150 °C	-40 °C	MOSFET (Metal Oxide)	420 mOhm	650 V	32 nC	PG-TO252-3	AEC-Q101	Automotive

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 650 V 8.7A (Tc) 83.3W (Tc) Surface Mount PG-TO252-3-341

Technical documentation and resources