Discrete Semiconductor Products

IGT60R190D1SATMA1

Obsolete

GANFET N-CH 600V 12.5A 8HSOF

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Discrete Semiconductor Products

Obsolete

GANFET N-CH 600V 12.5A 8HSOF

Technical Specifications

Parameters and characteristics for this part

Specification	IGT60R190D1SATMA1

Current - Continuous Drain (Id) @ 25°C	12.5 A
Drain to Source Voltage (Vdss)	600 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds [Max]	157 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerSFN
Power Dissipation (Max)	55.5 W
Supplier Device Package	PG-HSOF-8-3
Technology	GaNFET (Gallium Nitride)
Vgs (Max)	-10 V
Vgs(th) (Max) @ Id	1.6 V

Part	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Package / Case	Vgs(th) (Max) @ Id	Operating Temperature [Max]	Operating Temperature [Min]	Technology	Drain to Source Voltage (Vdss)	Supplier Device Package	FET Type	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]
INFINEON IGT60R190D1SATMA1	-10 V	12.5 A	Surface Mount	8-PowerSFN	1.6 V	150 °C	-55 °C	GaNFET (Gallium Nitride)	600 V	PG-HSOF-8-3	N-Channel	55.5 W	157 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 7.79

General part information

N-Channel 600 V 12.5A (Tc) 55.5W (Tc) Surface Mount PG-HSOF-8-3

Technical documentation and resources