HMC635-SX
ActiveDRIVER AMPLIFIER CHIP, 18 - 40 GHZ
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HMC635-SX
ActiveDRIVER AMPLIFIER CHIP, 18 - 40 GHZ
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Technical Specifications
Parameters and characteristics for this part
| Specification | HMC635-SX |
|---|---|
| Current - Supply | 280 mA |
| Gain | 19.5 dB |
| Mounting Type | Surface Mount |
| Noise Figure | 8 dB |
| P1dB | 23 dBm |
| Package / Case | Die |
| RF Type | General Purpose |
| Supplier Device Package | Die |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | Updated |
|---|---|---|---|---|
| Digikey | Tray | 2 | $ 337.88 | <3d |
| 4 | $ 325.90 | |||
| 6 | $ 319.23 | |||
| 10 | $ 311.14 | |||
| 14 | $ 306.01 | |||
| 20 | $ 300.74 | |||
Description
General part information
HMC635-Die Series
The HMC635 is a GaAs PHEMT MMIC Driver Amplifier die which operates between 18 and 40 GHz. The amplifier provides 19.5 dB of gain, +29 dBm Output IP3, and +23 dBm of output power at 1 dB gain compression, while requiring 280 mA from a +5V supply. Ideal as a driver amplifier for microwave radio applications, or as an LO driver for mixers operating between 18 and 40 GHz, the HMC635 is capable of providing up to +24 dBm of saturated output power at 15% PAE. The amplifier’s I/Os are DC blocked and internally matched to 50 Ohms making it ideal for integration into Multi-Chip-Modules (MCMs). All data is taken with die connected at input and output RF ports via two 1 mil wedge bonds of 500μm length.ApplicationsPoint-to-Point RadiosPoint-to-Multi-Point Radios & VSATLO Driver for MixersMilitary & Space
Documents
Technical documentation and resources
