Specification	NTMFS0D7N03CGT1G

Current - Continuous Drain (Id) @ 25°C	59 A, 409 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	147 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	12300 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN, 5 Leads
Power Dissipation (Max)	187 W, 4 W
Rds On (Max) @ Id, Vgs	0.65 mOhm
Supplier Device Package	5-DFN (5x6)
Supplier Device Package	8-SOFL
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.2 V

NTMFS0D8N02P1E Series

MOSFET, Power, 25V Single N-Channel, SO-8FL

Part	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Supplier Device Package	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Mounting Type	Package / Case	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs [Max]	Power Dissipation (Max)	Vgs (Max) [Max]	FET Type	Vgs (Max)	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]
ON Semiconductor NTMFS0D8N02P1ET1G	2 V	-55 °C	150 °C	MOSFET (Metal Oxide)	5-DFN (5x6)	8-SOFL	8600 pF	4.5 V 10 V	25 V	Surface Mount	8-PowerTDFN 5 Leads	55 A 365 A	52 nC	0.68 mOhm	3.2 W 139 W	-12 V 16 V	N-Channel
ON Semiconductor NTMFS0D7N03CGT1G	2.2 V	-55 °C	175 ░C	MOSFET (Metal Oxide)	5-DFN (5x6)	8-SOFL		10 V	30 V	Surface Mount	8-PowerTDFN 5 Leads	59 A 409 A	147 nC		4 W 187 W		N-Channel	20 V	0.65 mOhm	12300 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

MOSFET, Power, 30V/±20V N-Channel, 0.7mΩ @ 10V, 409, SO8FL 5x6mm

Technical documentation and resources