Discrete Semiconductor Products

BUK6D385-100EX

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MOSFET N-CH 100V 1.4A/3.7A 6DFN

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Discrete Semiconductor Products

Active

MOSFET N-CH 100V 1.4A/3.7A 6DFN

Technical Specifications

Parameters and characteristics for this part

Specification	BUK6D385-100EX

Current - Continuous Drain (Id) @ 25°C	3.7 A, 1.4 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	6.8 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	195 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	6-UDFN Exposed Pad
Power Dissipation (Max)	15 W, 2 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	385 mOhm
Supplier Device Package	DFN2020MD-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.7 V

Part	Vgs(th) (Max) @ Id	Mounting Type	FET Type	Supplier Device Package	Grade	Gate Charge (Qg) (Max) @ Vgs [Max]	Qualification	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Package / Case	Vgs (Max)
Freescale Semiconductor - NXP BUK6D385-100EX	2.7 V	Surface Mount	N-Channel	DFN2020MD-6	Automotive	6.8 nC	AEC-Q101	100 V	385 mOhm	195 pF	MOSFET (Metal Oxide)	-55 °C	175 ░C	4.5 V 10 V	1.4 A 3.7 A	2 W 15 W	6-UDFN Exposed Pad	20 V

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General part information

N-Channel 100 V 1.4A (Ta), 3.7A (Tc) 2W (Ta), 15W (Tc) Surface Mount DFN2020MD-6

Technical documentation and resources