Zenode.ai Logo
Beta
TPH1R306P1 - 12V - 300V MOSFETs, N-ch MOSFET, 60 V, 0.00128 Ω@10V, SOP Advance, U-MOSⅨ-H
Discrete Semiconductor Products

TPH2R104PL,LQ

Active
Toshiba Semiconductor and Storage

12V - 300V MOSFETS, N-CH MOSFET, 40 V, 0.0021 Ω@10V, SOP ADVANCE, U-MOSⅨ-H

TPH1R306P1 - 12V - 300V MOSFETs, N-ch MOSFET, 60 V, 0.00128 Ω@10V, SOP Advance, U-MOSⅨ-H
Discrete Semiconductor Products

TPH2R104PL,LQ

Active
Toshiba Semiconductor and Storage

12V - 300V MOSFETS, N-CH MOSFET, 40 V, 0.0021 Ω@10V, SOP ADVANCE, U-MOSⅨ-H

Technical Specifications

Parameters and characteristics for this part

SpecificationTPH2R104PL,LQ
Current - Continuous Drain (Id) @ 25°C100 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]78 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]6230 pF
Mounting TypeSurface Mount
Operating Temperature175 °C
Package / Case8-PowerVDFN
Power Dissipation (Max)830 mW
Power Dissipation (Max)116 W
Rds On (Max) @ Id, Vgs2.1 mOhm
Supplier Device Package8-SOP Advance
Supplier Device Package [x]5
Supplier Device Package [y]5
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 4800$ 1.15

Description

General part information

TPH2R104PL Series

12V - 300V MOSFETs, N-ch MOSFET, 40 V, 0.0021 Ω@10V, SOP Advance, U-MOSⅨ-H

Documents

Technical documentation and resources

Selecting MOSFETs and Consideration for Circuit Design: Power MOSFET Application Notes

Application Note

Structures and Characteristics: Power MOSFET Application Notes

Application Note

Resonant Circuits and Soft Switching

Application Note

Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2

Application Note

Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system

Application Note

Avalanche energy calculation

Application Note

TPH2R104PL Data sheet/Japanese

Data sheet

Maximum Ratings: Power MOSFET Application Notes

Application Note

Motor Control (Vacuum Cleaners)

Application Note

Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes

Application Note

Quick Reference Guide for Thermal Design for Discrete Semiconductor Devices

Application Note

MOSFET SPICE model grade

Application Note

MOSFET Gate Drive Circuit: Power MOSFET Application Notes

Application Note

Efficiency Evaluation and Loss Analysis of 300W isolated DC-DC converter

Application Note

Simplified CFD Model Application Note

Application Note

Electrical Characteristics: Power MOSFET Application Notes

Application Note

Hints and Tips for Thermal Design for Discrete Semiconductor Devices

Application Note

MOSFET Self-Turn-On Phenomenon

Application Note

Parasitic Oscillation and Ringing: Power MOSFET Application Notes

Application Note

MOSFET Avalanche Ruggedness: Power MOSFET Application Notes

Application Note

Calculating the Temperature of Discrete Semiconductor Devices

Application Note

Parasitic Oscillation between Parallel Power MOSFETs: Power MOSFET Application Notes

Application Note

Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes

Application Note

Selection Guide MOSFETs 2025 Rev1.0

Catalog

MOSFET Secondary Breakdown

Application Note

Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2

Application Note

Reverse Recovery Operation and Destruction of MOSFET Body Diode

Application Note

RC Snubbers for Step-Down Converters

Application Note

Derating of the MOSFET Safe Operating Area

Application Note

TPH2R104PL Data sheet/English

Data sheet

U-MOSⅨ-H 60V Low VDS spike TPH1R306P1

Application Note

Hints and Tips for Thermal Design part3

Application Note