
TPS51601ADRBR
Active30-V HALF BRIDGE GATE DRIVER WITH DEAD-TIME CONTROL
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TPS51601ADRBR
Active30-V HALF BRIDGE GATE DRIVER WITH DEAD-TIME CONTROL
Technical Specifications
Parameters and characteristics for this part
| Specification | TPS51601ADRBR |
|---|---|
| Channel Type | Synchronous |
| Driven Configuration | Half-Bridge |
| Gate Type | N-Channel MOSFET |
| Input Type | Non-Inverting |
| Mounting Type | Surface Mount |
| Number of Drivers | 2 |
| Operating Temperature [custom] | -40 °C, 105 °C |
| Package / Case | 8-VDFN Exposed Pad |
| Rise / Fall Time (Typ) [custom] | 15 ns |
| Rise / Fall Time (Typ) [custom] | 10 ns |
| Supplier Device Package | 8-SON (3x3) |
| Voltage - Supply [Max] | 5.5 V |
| Voltage - Supply [Min] | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 1.58 | |
| 10 | $ 1.41 | |||
| 25 | $ 1.34 | |||
| 100 | $ 1.10 | |||
| 250 | $ 1.03 | |||
| 500 | $ 0.91 | |||
| 1000 | $ 0.72 | |||
| Digi-Reel® | 1 | $ 1.58 | ||
| 10 | $ 1.41 | |||
| 25 | $ 1.34 | |||
| 100 | $ 1.10 | |||
| 250 | $ 1.03 | |||
| 500 | $ 0.91 | |||
| 1000 | $ 0.72 | |||
| Tape & Reel (TR) | 3000 | $ 0.67 | ||
| 6000 | $ 0.64 | |||
| 15000 | $ 0.61 | |||
| Texas Instruments | LARGE T&R | 1 | $ 1.17 | |
| 100 | $ 0.90 | |||
| 250 | $ 0.66 | |||
| 1000 | $ 0.47 | |||
Description
General part information
TPS51601A Series
The TPS51601A is a synchronous buck MOSFET driver with integrated boost switch. This high-performance driver is capable of driving high-side and low-side side N-channel FETs with the highest speed and lowest switching loss. Adaptive dead-time control and shoot-through protection are included.
The TPS51601A is available in the space-saving 8-pin 3 mm × 3 mm SON package and operates between –40°C and 105°C.
The TPS51601A is a synchronous buck MOSFET driver with integrated boost switch. This high-performance driver is capable of driving high-side and low-side side N-channel FETs with the highest speed and lowest switching loss. Adaptive dead-time control and shoot-through protection are included.
Documents
Technical documentation and resources