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PBSS302NZ,135
Discrete Semiconductor Products

PBSS302NZ,135

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Nexperia USA Inc.

20 V, 5.8 A NPN LOW VCESAT TRANSISTOR

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PBSS302NZ,135
Discrete Semiconductor Products

PBSS302NZ,135

Active
Nexperia USA Inc.

20 V, 5.8 A NPN LOW VCESAT TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

SpecificationPBSS302NZ,135
Current - Collector (Ic) (Max) [Max]5.8 A
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]250
Frequency - Transition140 MHz
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseTO-261AA, TO-261-4
Power - Max [Max]2 W
QualificationAEC-Q100
Supplier Device PackageSOT-223
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic250 mV
Voltage - Collector Emitter Breakdown (Max) [Max]20 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 4000$ 1.30

Description

General part information

PBSS302NZ Series

NPN low VCEsattransistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.