Discrete Semiconductor Products

SSM6K818R,LF

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HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, N-CH MOSFET, 30 V, 15 A, 0.0089 Ω@10V, TSOP6F

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Discrete Semiconductor Products

Active

HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, N-CH MOSFET, 30 V, 15 A, 0.0089 Ω@10V, TSOP6F

Technical Specifications

Parameters and characteristics for this part

Specification	SSM6K818R,LF

Current - Continuous Drain (Id) @ 25°C	15 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	7.5 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	1130 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	6-SMD, Flat Leads
Power Dissipation (Max) [Max]	1.5 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	12 mOhm
Supplier Device Package	6-TSOP-F
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.1 V

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch MOSFET, 30 V, 15 A, 0.0089 Ω@10V, TSOP6F

Part	Rds On (Max) @ Id, Vgs	Grade	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Qualification	FET Type	Supplier Device Package	Vgs(th) (Max) @ Id	Technology	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Vgs (Max)	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature
Toshiba Semiconductor and Storage SSM6K818R,LF	12 mOhm	Automotive	7.5 nC	1130 pF	15 A	Surface Mount	AEC-Q101	N-Channel	6-TSOP-F	2.1 V	MOSFET (Metal Oxide)	30 V	1.5 W	20 V	6-SMD Flat Leads	4.5 V 10 V	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	5310	$ 1.09

General part information

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch MOSFET, 30 V, 15 A, 0.0089 Ω@10V, TSOP6F

Technical documentation and resources