Discrete Semiconductor Products

SI7904BDN-T1-E3

LTB

MOSFET 2N-CH 20V 6A PPAK 1212

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Discrete Semiconductor Products

LTB

MOSFET 2N-CH 20V 6A PPAK 1212

Technical Specifications

Parameters and characteristics for this part

Specification	SI7904BDN-T1-E3

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	6 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	24 nC
Input Capacitance (Ciss) (Max) @ Vds	860 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® 1212-8 Dual
Power - Max [Max]	17.8 W
Rds On (Max) @ Id, Vgs	30 mOhm
Supplier Device Package	PowerPAK® 1212-8 Dual
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

Part	FET Feature	Package / Case	Drain to Source Voltage (Vdss)	Mounting Type	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Configuration	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Power - Max [Max]	Technology
Vishay General Semiconductor - Diodes Division SI7904BDN-T1-GE3	Logic Level Gate	PowerPAK® 1212-8 Dual	20 V	Surface Mount	PowerPAK® 1212-8 Dual	24 nC	30 mOhm	6 A	1 V	2 N-Channel (Dual)	860 pF	-55 °C	150 °C	17.8 W	MOSFET (Metal Oxide)
Vishay General Semiconductor - Diodes Division SI7904BDN-T1-E3	Logic Level Gate	PowerPAK® 1212-8 Dual	20 V	Surface Mount	PowerPAK® 1212-8 Dual	24 nC	30 mOhm	6 A	1 V	2 N-Channel (Dual)	860 pF	-55 °C	150 °C	17.8 W	MOSFET (Metal Oxide)

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General part information

Mosfet Array 20V 6A 17.8W Surface Mount PowerPAK® 1212-8 Dual

Technical documentation and resources