Specification	NSVDTA115EET1G

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	80
Grade	Automotive
Mounting Type	Surface Mount
Package / Case	SC-75, SOT-416
Power - Max [Max]	200 mW
Qualification	AEC-Q101
Resistor - Base (R1)	100 kOhms
Resistor - Emitter Base (R2)	100 kOhms
Supplier Device Package	SOT-416, SC-75
Transistor Type	PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic	250 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

DTA115TE Series

PNP Bipolar Digital Transistor (BRT)

Part	Mounting Type	Grade	Vce Saturation (Max) @ Ib, Ic	Qualification	Power - Max [Max]	Current - Collector Cutoff (Max) [Max]	Resistor - Emitter Base (R2)	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case	Resistor - Base (R1)	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Transistor Type
ON Semiconductor NSVDTA115EET1G	Surface Mount	Automotive	250 mV	AEC-Q101	200 mW	500 nA	100 kOhms	80	50 V	SC-75 SOT-416	100 kOhms	SC-75 SOT-416	100 mA	PNP - Pre-Biased
ON Semiconductor DTA115EET1G	Surface Mount		250 mV		200 mW	500 nA	100 kOhms	80	50 V	SC-75 SOT-416	100 kOhms	SC-75 SOT-416	100 mA	PNP - Pre-Biased
ON Semiconductor DTA115TET1G	Surface Mount		250 mV		200 mW	500 nA		160 hFE	50 V	SC-75 SOT-416	100 kOhms	SC-75 SOT-416	100 mA	PNP - Pre-Biased

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tape & Reel (TR)	3000	$ 0.04
		6000	$ 0.03
		9000	$ 0.03
		15000	$ 0.03
		21000	$ 0.03
		30000	$ 0.03
		75000	$ 0.02
		150000	$ 0.02
		300000	$ 0.02
Newark	Each (Supplied on Full Reel)	12000	$ 0.03
		18000	$ 0.02
		30000	$ 0.02
ON Semiconductor	N/A	1	$ 0.02

Description

General part information

DTA115TE Series

This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.