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BC869-16,115
Discrete Semiconductor Products

BC869-16,115

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Nexperia USA Inc.

20 V, 2 A PNP MEDIUM POWER TRANSISTORS

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BC869-16,115
Discrete Semiconductor Products

BC869-16,115

Active
Nexperia USA Inc.

20 V, 2 A PNP MEDIUM POWER TRANSISTORS

Technical Specifications

Parameters and characteristics for this part

SpecificationBC869-16,115
Current - Collector (Ic) (Max) [Max]1 A
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]100
Frequency - Transition140 MHz
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseTO-243AA
Power - Max [Max]1.2 W
QualificationAEC-Q100
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic500 mV
Voltage - Collector Emitter Breakdown (Max) [Max]20 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.19
88000$ 0.28

Description

General part information

BC869-16 Series

PNP medium power transistor in a SOT89 Surface-Mounted Device (SMD) plastic package. NPN complement: BC868.