Specification	PBSS4350T-QR

Current - Collector (Ic) (Max) [Max]	2 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	300
Frequency - Transition	100 MHz
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	1.2 W
Qualification	AEC-Q101
Supplier Device Package	TO-236AB
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	370 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

PBSS4350T-Q Series

50 V; 3 A NPN low VCEsat transistor

Part	Power - Max [Max]	Mounting Type	Vce Saturation (Max) @ Ib, Ic	Transistor Type	Package / Case	Supplier Device Package	Frequency - Transition	Qualification	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector Cutoff (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Grade	Current - Collector (Ic) (Max) [Max]	Operating Temperature
Nexperia USA Inc. PBSS4350T-QR	1.2 W	Surface Mount	370 mV	NPN	SC-59 SOT-23-3 TO-236-3	TO-236AB	100 MHz	AEC-Q101	50 V	100 nA	300	Automotive	2 A	150 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.11

General part information

NPN low VCEsattransistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

Technical documentation and resources